4707 dey road liverpool, n.y. 13088 (315) 701-6751 features: p and n channel mosfets for ease of drive 100 volt, 10 amp full h-bridge isolated package for direct heat sinking, excellent thermal conductivity avalanche rated devices iso-9001 certified by dscc m.s.kennedy corp. h-bridge mosfet power module stepper motor servo control disk drive head control x-y table control az-el antenna control typical applications pin-out information 1 2 3 4 5 6 gate q1 source q1 drain 1,2 gate q2 n/c n/c source 4 gate q4 drain 3,4 gate q3 n/c source 2,3 12 11 10 9 8 7 3014 1 equivalent schematic the msk 3014 is an h-bridge power circuit packaged in a space efficient isolated ceramic tab power sip package. the msk 3014 consists of p-channel mosfets for the top transistors and n-channel mosfets for the bottom transistors. the msk 3014 uses m.s. kennedy's proven power hybrid technology to bring a cost effective high perfomance circuit for use in today's sophisticated servo motor and disk drive systems. description: rev. b 7/00
v gs =0 i d =0.25ma (all transistors) v ds =100v v gs =0v (q2,q3) v ds =-100v v gs =0v (q1,q4) v gs =20v v ds =0 (all transistors) v ds =v gs i d =250a (q2,q3) v ds =v gs i d =250a (q1,q4) v gs =10v i d =9.0a (q2,q3) v gs =-10v i d =-8.4a (q1,q4) v gs =10v i d =9.0a (q2,q3) v gs =10v i d =-8.4a (q1,q4) v ds =50v i d =9.0a (q2,q3) v ds =-50v i d =-8.4a (q1,q4) i d =9.0a v ds =80v v gs =10v v dd =50v i d =9.0a r g =12 w r d =5.5 w v gs =0v v ds =25v f=1.0mhz i d =-8.4a v ds =-80v v gs =-10v v dd =-50v i d =-8.4a r g =9.1 w r d =6.2 w v gs =0v v ds =-25v f=1.0mhz i s =9.0a v gs =0v (q2,q3) i s =-8.4a v gs =0v (q1,q4) i s =9.0a di/dt=100a/s (q2,q3) i s =-8.4a di/dt=100a/s (q1,q4) i s =9.0a di/dt=100a/s (q2,q3) i s =-8.4a di/dt=100a/s (q1,q4) absolute maximum ratings 1 2 3 4 drain-source leakage current gate-source threshold voltage drain-source on resistance drain-source on resistance forward transconductance forward on voltage reverse recovery time reverse recovery charge drain-source breakdown voltage gate-source leakage current n-channel (q2,q3) total gate charge gate-source charge gate-drain charge turn-on delay time rise time turn-off delay time fall time input capacitance output capacitance reverse transfer capacitance p-channel (q1,q3,q5) total gate charge gate-source charge gate-drain charge turn-on delay time rise time turn-off delay time fall time input capacitance output capacitance reverse transfer capacitance body diode 7.9mj 7.9mj +175c max -55c to +150c -55c to +125c 300c max single pulse avalanche energy (q2,q4,q6) (q1,q3,q5) junction temperature storage temperature case operating temperature range lead temperature range (10 seconds) drain to source voltage drain to gate voltage (r gs =1m w ) gate to source voltage (continuous) continuous current pulsed current thermal resistance (junction to case) v dss v dgdr v gs i d i dm r th-jc t j t st t c t ld 100v max 100v max 20v max 10a max 25a max 7.9c/w parameter units MSK3014 test conditions v a a na v v w w w w s s nc nc nc ns ns ns ns pf pf pf nc nc nc ns ns ns ns pf pf pf v v ns ns c c min. 100 - - - 2.0 2.0 - - - - 6.4 3.2 - - - - - - - - - - - - - - - - - - - - - - - - - - typ. - - - - - - - - - - - - - - - 6.4 27 37 25 640 160 88 - - - 15 58 45 46 760 260 170 1.3 -1.6 130 130 650 650 max. - 25 -25 100 4.0 4.0 0.20 0.28 0.11 0.20 - - 44 6.2 21 - - - - - - - 58 8.3 32 - - - - - - - - - 190 190 970 970 electrical specifications 2 1 3 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 notes: this parameter is guaranteed by design but need not be tested. typical parameters are representative of actual device performa nce but are for reference only. resistance as seen at package pins. resistance for die only; use for thermal calculations. t a =25c unless otherwise specified. 4 rev. b 7/00 2
most everything applies to driving the p-channel gates as the n-channel gates. the only difference is that the p-channel ga te to source voltage needs to be negative. most motor drive ic's are set up with an open collector or drain output for directly inte rfacing with the p-channel gates. if not, an external common emitter switching transistor configuration (see figure 2) will turn the p - channel mosfet on. all the other rules of mosfet gate drive apply here. for high supply voltages, additional circuitry must b e used to protect the p-channel gate from excessive voltages. this deadtime should allow for the turn on and turn off time of the transistors, especially when slowing them down with gate resistors. this situation will be present when switching motor direction, or when sophisticated timing schemes are used for se rvo systems such as locked antiphase pwm'ing for high bandwidth operation. application notes n-channel gates (q2,q3) for driving the n-channel gates, it is important to keep in mind that it is essentially like driving a capacitance to a suff icient voltage to get the channel fully on. driving the gates to +15 volts with respect to their sources assures that the transistors are on. this will keep the dissipation down to a minimum level [r ds(on) specified in the data sheet]. how quickly the gate gets turned on and off will determine the dissipation of the transistor while it is transitioning from off to on, and vice-versa. turning the gate on and off too slow will cause excessive dissipation, while turning it on and off too fast will cause excessive switching noise in the system. it is important to have as low a driving impedance as practical for the size of the transistor. many motor dri ve ic's have sufficient gate drive capability for the msk 3014. if not, paralleled cmos standard gates will usually be sufficient. a series resistor in the gate circuit slows it down, but also suppresses any ringing caused by stray inductances in the mosfet circuit. the selection of the resistor is determined by how fast the mosfet wants to be switched. see figure 1 for circuit details. p-channel gates (q1,q4) bridge drive considerations figure 1 figure 2 3 figure 3 it is important that the logic used to turn on and off the various transistors allow sufficient "dead time" between a high s ide transistor and its low side transistor to make sure that at no time are they both on. when they are, this is called "shoot-thr ough", and it places a momentary short across the power supply. this overly stresses the transistors and causes excessive noise as we ll. see figure 3. rev. b 7/00
typical performance curves rev. b 7/00 4
mechanical specifications the information contained herein is believed to be accurate at the time of printing. msk reserves the right to make changes to its products or specifications without notice, however, and assumes no liability for the use of its products. m.s. kennedy corp. 4707 dey road, liverpool, new york 13088 phone (315) 701-6751 fax (315) 701-6752 www.mskennedy.com rev. b 7/00 part number msk 3014 industrial screening level ordering information all dimensions are 0.010 inches unless otherwise labeled. torque specification 3 to 5 in/lbs. teflon screws or washers are recommended. 5
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